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January 2010
FDC642P
Single P-Channel 2.5V Specified PowerTrench ? MOSFET
-20 V, -4.0 A, 65 m ?
Features
Max r DS(on) = 65 m ? at V GS = -4.5 V, I D = -4.0 A
Max r DS(on) = 100 m ? at V GS = -2.5 V, I D = -3.2 A
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low r DS(on)
SuperSOT TM -6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick)
Termination is Lead-free and RoHS Compliant
General Description
This P-Channel 2.5V specified MOSFET is produced using
Fairchild’s advanced PowerTrench ? process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the
larger packages are impractical.
Applications
Load switch
Battery protection
Power management
D
D
G
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
D
D
S
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-20
±8
Units
V
V
I D
P D
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25°C
(Note 1a)
( Note 1a)
(Note 1b)
-4.0
-20
1.6
0.8
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
.642
Device
FDC642P
Package
SSOT-6 TM
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDC642P Rev . C2
1
www.fairchildsemi.com
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